MNS1N6640US/TR
DIODE GP 50V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology MNS1N6640US-TR is a General Purpose Diode with a maximum DC reverse voltage of 50 V and an average rectified current handling of 300mA. This component features a fast recovery time of 4 ns, suitable for applications requiring rapid switching. The forward voltage drop is specified at 1 V maximum at 200 mA. Its reverse leakage current is a minimal 100 nA at 50 V.
This diode is constructed using standard technology and is housed in a SQ-MELF, D (D-5D) surface mount package, supplied on tape and reel. The MNS1N6640US-TR meets MIL-PRF-19500/609 qualification, indicating suitability for military and high-reliability applications. Its operating junction temperature range spans from -65°C to 175°C. This component is commonly utilized in aerospace, defense, and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/609 |
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