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MNS1N5811US/TR

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MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology MNS1N5811US-TR is a 150V, 3A general-purpose diode in a SQ-MELF package. This surface mount component features a fast recovery time of 30 ns, suitable for applications requiring switching speeds greater than 200mA. Its reverse leakage current is a low 5 µA at 150V. The forward voltage drop is 875 mV at 4A. With a junction operating temperature range of -65°C to 175°C, this diode is designed for demanding environments. The capacitance at 10V and 1MHz is 60pF. This device finds application in power supplies, automotive electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F60pF @ 10V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Reverse Leakage @ Vr5 µA @ 150 V

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