MNS1N5811US/TR
DIODE GP 150V 3A SQ-MELF BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology MNS1N5811US-TR is a 150V, 3A general-purpose diode in a SQ-MELF package. This surface mount component features a fast recovery time of 30 ns, suitable for applications requiring switching speeds greater than 200mA. Its reverse leakage current is a low 5 µA at 150V. The forward voltage drop is 875 mV at 4A. With a junction operating temperature range of -65°C to 175°C, this diode is designed for demanding environments. The capacitance at 10V and 1MHz is 60pF. This device finds application in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
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