JANTXV1N914UR
DIODE GEN PURP 75V 200MA DO213AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N914UR is a military-grade, general-purpose small-signal diode. It features a maximum reverse voltage (Vr) of 75 V and an average rectified forward current (Io) of 200 mA. The diode exhibits a forward voltage (Vf) of 1.2 V at 50 mA and a reverse leakage current (Ir) of 500 nA at 75 V. With a reverse recovery time (trr) of 20 ns, this component is suitable for high-speed switching applications. Its junction capacitance is 2.8 pF at 1.5 V and 1 MHz. The JANTXV1N914UR is available in a DO-213AA surface-mount package and is qualified to MIL-PRF-19500/116 standards, making it a reliable choice for aerospace and defense systems. Operating temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-213AA |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2.8pF @ 1.5V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-213AA |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 50 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 75 V |
| Qualification | MIL-PRF-19500/116 |
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