JANTXV1N914
DIODE GEN PURP 75V 200MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N914 is a general-purpose silicon epitaxial planar diode. This through-hole component, housed in a DO-204AH (DO-35) package, offers a maximum reverse voltage of 75V and an average rectified forward current of 200mA. Its low reverse leakage current is rated at 500 nA at 75V. The diode exhibits a forward voltage drop of 1.2V at 50mA and a capacitance of 2.8pF at 1.5V and 1MHz. With a reverse recovery time of 20 ns, it is suitable for signal switching applications. This component meets MIL-PRF-19500/116 qualification and is designed for operation across a wide temperature range of -65°C to 175°C. It finds application in military and aerospace systems requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2.8pF @ 1.5V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 50 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 75 V |
| Qualification | MIL-PRF-19500/116 |
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