JANTXV1N6666
DIODE GEN PURP 200V 10A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6666 is a general-purpose diode with a maximum DC reverse voltage of 200V and an average rectified current capability of 10A. This through-hole component, housed in a TO-257 package, features a forward voltage of 1V at 30A. The JANTXV1N6666 is characterized by its fast recovery time of 35 ns, classifying it within the fast recovery speed category (<500ns, >200mA Io). Its operating junction temperature reaches up to 200°C. This device is suitable for applications in the aerospace and defense industries, demanding high reliability and performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | 200°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 30 A |
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