JANTXV1N6659R
DIODE GEN PURP 200V 15A TO254Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6659R is a military-grade, general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage (Vr) of 200 V and a high average rectified current (Io) capability of 15 A. Its fast recovery time (trr) is rated at 35 ns, classifying it as a fast-recovery diode. The forward voltage drop (Vf) is a maximum of 1.2 V at a forward current (If) of 20 A. With a reverse leakage current of 10 µA at 200 V and a capacitance of 150 pF at 10 V and 1 MHz, the JANTXV1N6659R offers robust performance. Packaged in a TO-254-3, TO-254AA through-hole configuration and qualified to MIL-PRF-19500/616, this diode is suitable for use in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 150pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-254 |
| Operating Temperature - Junction | - |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | MIL-PRF-19500/616 |
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