Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

JANTXV1N6659

Banner
productimage

JANTXV1N6659

DIODE GEN PURP 200V 15A TO254

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's JANTXV1N6659 is a military-grade general-purpose diode designed for demanding applications. This through-hole component, housed in a TO-254-3 (TO-254AA) package, offers a maximum DC reverse voltage of 200 V and an average rectified forward current capability of 15 A. It features a fast reverse recovery time of 35 ns, suitable for applications requiring efficient switching. The forward voltage drop is a maximum of 1.2 V at 20 A, with a low reverse leakage current of 10 µA at 200 V. This component is qualified to MIL-PRF-19500/616 standards, indicating its suitability for high-reliability environments. Typical applications include power supplies, industrial controls, and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-254-3, TO-254AA
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F150pF @ 10V, 1MHz
Current - Average Rectified (Io)15A
Supplier Device PackageTO-254
Operating Temperature - Junction-
GradeMilitary
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 200 V
QualificationMIL-PRF-19500/616

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

product image
JANTXV1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

product image
JAN1N5553/TR

DIODE GEN PURP 800V 3A