JANTXV1N6631
DIODE GEN PURP 1.1KV 1.4A E-PAKManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6631 is a high-reliability general-purpose diode with a 1100 V reverse voltage rating and a 1.4 A average rectified current. This through-hole component, housed in an E-PAK package, features a maximum forward voltage of 1.6 V at 1.4 A and a reverse leakage current of 4 µA at 1100 V. Its fast recovery time is rated at 60 ns. The JANTXV1N6631 is qualified to MIL-PRF-19500/590, reflecting its suitability for demanding applications in aerospace, defense, and industrial sectors requiring robust performance under extreme conditions. Capacitance is specified at 40 pF at 10 V and 1 MHz. The operating junction temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.4A |
| Supplier Device Package | E-PAK |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 1.4 A |
| Current - Reverse Leakage @ Vr | 4 µA @ 1100 V |
| Qualification | MIL-PRF-19500/590 |
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