JANTXV1N6628US/TR
DIODE GEN PURP 660V 1.75A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6628US-TR is a military-grade, general-purpose diode designed for demanding applications. This device features a 660V reverse voltage rating and a 1.75A average rectified current capability. The surface mount SQ-MELF, E package (Supplier Device Package D-5B) is ideal for high-density board designs. With a fast recovery time of 30 ns, it is suitable for switching applications. Key electrical parameters include a forward voltage of 1.35V at 2A and a low reverse leakage of 2 µA at 660V. The capacitance at 10V and 1MHz is 40pF. This component is qualified to MIL-PRF-19500/590, ensuring reliability in aerospace and defense systems. It operates within a junction temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 660 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 660 V |
| Qualification | MIL-PRF-19500/590 |
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