JANTXV1N6628US
DIODE GEN PURP 660V 1.75A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6628US is a General Purpose Diode with a 660V reverse voltage rating and an average rectified current capability of 1.75A. This component features a fast recovery time of 30 ns, classifying it within the >200mA (Io) speed category. The diode exhibits a maximum forward voltage of 1.35V at 2A and a low reverse leakage current of 2 µA at its 660V rating. Its capacitance is measured at 40pF @ 10V, 1MHz. Packaged in a D-5B (SQ-MELF, E) surface mount configuration, this device is qualified to MIL-PRF-19500/590, indicating its suitability for military applications. The operating temperature range for this component is -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 660 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 660 V |
| Qualification | MIL-PRF-19500/590 |
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