JANTXV1N6626US
DIODE GEN PURP 220V 1.75A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6626US is a military-grade, general-purpose diode with a maximum DC reverse voltage of 220 V. This surface-mount component, packaged in a D-5B (SQ-MELF, E) case, features an average rectified current handling capability of 1.75A. It exhibits a low reverse leakage current of 2 µA at 220 V and a forward voltage drop of 1.35 V at 2A. The diode's fast recovery time of 30 ns classifies it within the Fast Recovery category. Operating across a junction temperature range of -65°C to 150°C, the JANTXV1N6626US is qualified under MIL-PRF-19500/590 and is suitable for applications requiring robust performance in demanding environments, including aerospace and defense systems. Its capacitance is rated at 40pF @ 10V, 1MHz.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 220 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 220 V |
| Qualification | MIL-PRF-19500/590 |
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