JANTXV1N6622US
DIODE GEN PURP 660V 1.2A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N6622US is a general-purpose diode designed for demanding applications. This component features a 660V reverse voltage rating and a 1.2A average rectified forward current. The JANTXV1N6622US is constructed with a fast recovery time of 30 ns, making it suitable for switching applications. It exhibits a maximum forward voltage of 1.4V at 1.2A and a reverse leakage current of 500 nA at its maximum reverse voltage. This diode is qualified to MIL-PRF-19500/585 and operates within a junction temperature range of -65°C to 150°C. The JANTXV1N6622US utilizes a surface mount SQ-MELF, A (D-5A) package. Its robust design and military-grade qualification make it a reliable choice for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.2A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 660 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1.2 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 660 V |
| Qualification | MIL-PRF-19500/585 |
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