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JANTXV1N5816R

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JANTXV1N5816R

DIODE GEN PURP 150V 20A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTXV1N5816R is a military-grade, fast-recovery rectifier diode housed in a DO-203AA (DO-4) stud mount package. This component offers a maximum DC reverse voltage of 150V and a significant average rectified forward current handling capability of 20A. Its forward voltage drop is rated at a maximum of 950mV at 20A. The diode exhibits a low reverse leakage current of 10 µA at its peak reverse voltage of 150V and a reverse recovery time of 35 ns. Junction operating temperatures range from -65°C to 175°C, making it suitable for demanding environments. This device is qualified to MIL-PRF-19500/478 and is commonly employed in power supply rectification, switching power applications, and high-reliability systems within the aerospace and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeStud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard, Reverse Polarity
Capacitance @ Vr, F300pF @ 10V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 150 V
QualificationMIL-PRF-19500/478

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