JANTXV1N5812
DIODE GEN PURP 50V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5812 is a high-performance general-purpose diode designed for demanding applications. This stud-mount device, housed in a DO-203AA (DO-4) package, offers a reverse voltage capability of 50V and a substantial average rectified current handling of 20A. Engineered to meet stringent military specifications, including MIL-PRF-19500/478, this diode is qualified for use in aerospace and defense systems. It features a fast recovery time of 35 ns for efficient switching, with a maximum forward voltage drop of 950 mV at 20A. Operating across a wide temperature range from -65°C to 175°C, the JANTXV1N5812 exhibits a low reverse leakage of 10 µA at 50V and a capacitance of 300pF at 10V and 1MHz.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | MIL-PRF-19500/478 |