JANTXV1N5811US/TR
DIODE GEN PURP 150V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5811US-TR is a high-reliability, general-purpose diode featuring a 150V reverse voltage rating and a 3A average rectified current capability. Designed for demanding applications, this device operates across a wide temperature range of -65°C to 175°C. It boasts a fast recovery time of 30 ns and a forward voltage of 875 mV at 4A. The diode exhibits a low leakage current of 5 µA at 150V and a capacitance of 60pF at 10V and 1MHz. Packaged in a SQ-MELF, B footprint for surface mounting and supplied on tape and reel, this component meets MIL-PRF-19500/477 qualification, making it suitable for aerospace, defense, and other high-reliability sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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