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JANTXV1N5809US/TR

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JANTXV1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's JANTXV1N5809US-TR is a general-purpose rectifier diode rated for 100V reverse voltage and 3A average rectified current. This military-grade component features a fast recovery time of 30ns, making it suitable for high-frequency applications. The forward voltage drop is 875mV at 4A, with a low reverse leakage of 5µA at 100V. Its SQ-MELF package with a B designation ensures reliable surface mounting. The operating junction temperature range is -65°C to 175°C, and capacitance at 10V and 1MHz is 60pF. This diode is qualified to MIL-PRF-19500/477, indicating its suitability for demanding defense and aerospace applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F60pF @ 10V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Reverse Leakage @ Vr5 µA @ 100 V
QualificationMIL-PRF-19500/477

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