JANTXV1N5809US/TR
DIODE GEN PURP 100V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's JANTXV1N5809US-TR is a general-purpose rectifier diode rated for 100V reverse voltage and 3A average rectified current. This military-grade component features a fast recovery time of 30ns, making it suitable for high-frequency applications. The forward voltage drop is 875mV at 4A, with a low reverse leakage of 5µA at 100V. Its SQ-MELF package with a B designation ensures reliable surface mounting. The operating junction temperature range is -65°C to 175°C, and capacitance at 10V and 1MHz is 60pF. This diode is qualified to MIL-PRF-19500/477, indicating its suitability for demanding defense and aerospace applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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