JANTXV1N5807US
DIODE GEN PURP 50V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTXV1N5807US is a general-purpose diode designed for demanding applications, meeting MIL-PRF-19500/477 qualification. This device features a voltage rating of 50V DC Reverse (Vr) and an average rectified forward current (Io) of 3A. Its low reverse leakage current is 5 µA at 50V, and it offers a forward voltage drop (Vf) of 875 mV at 4A. The diode has a capacitance of 60pF at 10V and 1MHz. With a fast recovery time (trr) of 30 ns, it is suitable for high-frequency switching. The component operates across a wide temperature range of -65°C to 175°C. The JANTXV1N5807US is housed in a SQ-MELF, E package, also specified as D-5B, and is supplied in bulk packaging. This diode finds application in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
MBR40200PTE3/TU
DIODE SCHOTTKY 40A 200V TO-247AD
S3690
STD RECTIFIER
1N2789
DIODE GEN PURP 400V 70A DO5
