JANTXV1N5806US/TR
DIODE GEN PURP 150V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5806US-TR is a general-purpose diode qualified to MIL-PRF-19500/477. This component features a 150V reverse voltage rating and a 1A average rectified current capability. The device exhibits a low forward voltage of 875mV at 1A and a reverse leakage of 1 µA at its maximum reverse voltage. With a junction operating temperature range of -65°C to 175°C, it is designed for demanding applications. The diode has a reverse recovery time of 25ns, classifying it as a fast-recovery diode. Its capacitance at 10V and 1MHz is 25pF. The surface mount SQ-MELF, A package, supplied on tape and reel, is suitable for various industrial and high-reliability electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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