JANTXV1N5806URS
DIODE GEN PURP 150V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTXV1N5806URS is a 1A, 150V general-purpose rectifying diode in an A-MELF (SQ-MELF, A) surface mount package. This military-grade component, qualified to MIL-PRF-19500/477, features a maximum forward voltage of 875 mV at 1A and a reverse leakage current of 1 µA at 150V. With a reverse recovery time of 25 ns, it is classified as a fast recovery diode. The operating junction temperature range is -65°C to 175°C, and it exhibits a capacitance of 25 pF at 10V and 1MHz. This device finds application in demanding sectors such as aerospace and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
1N3600UR
DIODE GEN PURP 75V 300MA DO213AA
JANTX1N6874UTK2CS/TR
POWER SCHOTTKY
UFS110JE3/TR13
DIODE GEN PURP 100V 1A DO214BA
