JANTXV1N5804US
DIODE GEN PURP 100V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5804US is a high-performance general-purpose diode rated for 100V reverse voltage and 1A average rectified current. This device features a low forward voltage drop of 875mV at 1A and a reverse leakage of only 1µA at 100V. Designed for demanding applications, it boasts a fast recovery time of 25ns and operates across a wide junction temperature range of -65°C to 175°C. The JANTXV1N5804US is compliant with MIL-PRF-19500/477, indicating its suitability for military and aerospace applications. Its SQ-MELF, A package (D-5A) allows for efficient surface mounting. The device's capacitance is rated at 25pF at 10V and 1MHz.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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