JANTXV1N5804URS
DIODE GEN PURP 100V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5804URS is a general-purpose diode designed for demanding applications. This A-MELF packaged component offers a 100V reverse voltage (Vr) and a 1A average rectified current (Io). It features a fast recovery time (trr) of 25 ns, suitable for applications requiring efficient switching. The forward voltage (Vf) is a maximum of 875 mV at 1A. Reverse leakage current is rated at 1 µA at 100V. Operating junction temperatures range from -65°C to 175°C. This component is qualified to MIL-PRF-19500/477, indicating its suitability for military and high-reliability applications. Capacitance at 10V and 1MHz is 25pF. The A-MELF package is a surface-mount type.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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