JANTXV1N5802US
DIODE GEN PURP 50V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5802US is a high-reliability general-purpose diode designed for demanding applications. This component, qualified to MIL-PRF-19500/477, features a 50V reverse voltage and 1A average rectified current (Io). Its fast recovery time (trr) of 25 ns and forward voltage (Vf) of 875 mV at 1A make it suitable for power supply circuits and high-frequency switching applications. The JANTXV1N5802US operates across a wide temperature range of -65°C to 175°C, with a low reverse leakage current of 1 µA at 50V. The SQ-MELF, A package, also known as D-5A, facilitates surface mounting. Typical applications include aerospace, defense, and industrial control systems requiring robust and reliable diode performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
| Qualification | MIL-PRF-19500/477 |
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