JANTXV1N5623US/TR
DIODE GEN PURP 1KV 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5623US-TR is a general-purpose rectifier diode designed for demanding applications. This military-grade component offers a 1000V reverse voltage and 1A average rectified current, with a low 500 nA reverse leakage at 1V. Its fast recovery time of 500 ns is suitable for applications requiring efficient switching. The SQ-MELF, A package (D-5A) enables surface mount integration. Typical forward voltage is 1.6V at 3A, with a junction operating temperature range of -65°C to 175°C. This diode meets MIL-PRF-19500/429 qualification. It is commonly utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 1 V |
| Qualification | MIL-PRF-19500/429 |
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