JANTXV1N5622US/TR
DIODE GEN PURP 1KV 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5622US-TR is a general-purpose diode designed for demanding applications. This high-reliability component features a 1000 V reverse voltage (Vr) and a 1A average rectified current (Io). The surface mount D-5A package, also known as SQ-MELF, is suitable for robust PCB assembly. It exhibits a maximum forward voltage (Vf) of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1 V. With a reverse recovery time (trr) of 2 µs, this diode operates efficiently in standard recovery applications. Qualified to MIL-PRF-19500/427, its military-grade designation and an operating temperature range of -65°C to 200°C ensure performance in harsh environments. This diode is commonly utilized in aerospace, defense, and high-reliability industrial systems. Packaged in a Tape & Reel (TR) format.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 1 V |
| Qualification | MIL-PRF-19500/427 |
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