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JANTXV1N5616US

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JANTXV1N5616US

DIODE GEN PURP 400V 1A D-5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTXV1N5616US is a military-grade, general-purpose diode with a maximum reverse voltage of 400V and an average rectified current capability of 1A. This D-5A packaged device features a SQ-MELF, A case for surface mounting and operates across a junction temperature range of -65°C to 200°C. The diode exhibits a maximum forward voltage of 1.3V at 3A and a reverse leakage current of 500nA at its rated 400V VR. Qualified to MIL-PRF-19500/429, it offers a standard recovery time of 2 µs. Applications for this component include aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr500 nA @ 400 V
QualificationMIL-PRF-19500/429

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