JANTXV1N5616US
DIODE GEN PURP 400V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5616US is a military-grade, general-purpose diode with a maximum reverse voltage of 400V and an average rectified current capability of 1A. This D-5A packaged device features a SQ-MELF, A case for surface mounting and operates across a junction temperature range of -65°C to 200°C. The diode exhibits a maximum forward voltage of 1.3V at 3A and a reverse leakage current of 500nA at its rated 400V VR. Qualified to MIL-PRF-19500/429, it offers a standard recovery time of 2 µs. Applications for this component include aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V |
| Qualification | MIL-PRF-19500/429 |
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