JANTXV1N5616/TR
DIODE GEN PURP 400V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5616-TR is a general-purpose silicon rectifier diode with a maximum repetitive reverse voltage of 400V and a continuous average forward current of 1A. This MIL-PRF-19500/427 qualified component features a low reverse leakage current of 500 nA at 400V and a typical forward voltage drop of 1.3V at 3A. The diode's standard recovery time is 2 µs. It is housed in an A, Axial package and is supplied on tape and reel (TR) for automated assembly. The JANTXV1N5616-TR is suitable for applications requiring high reliability and performance, including aerospace, defense, and industrial systems. Its operating junction temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V |
| Qualification | MIL-PRF-19500/427 |
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