JANTXV1N5615US/TR
DIODE GEN PURP 200V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5615US-TR is a military-grade, general-purpose diode designed for demanding applications. This surface-mount component, housed in a SQ-MELF, A (D-5A) package, offers a DC reverse voltage rating of 200V and an average rectified current capability of 1A. Its fast recovery time of 150 ns and a forward voltage drop of 1.6V at 3A make it suitable for high-frequency rectification. The JANTXV1N5615US-TR exhibits a low reverse leakage current of 500 nA at 600V and a capacitance of 45pF at 12V and 1MHz. Qualified to MIL-PRF-19500/429 and operating across a junction temperature range of -65°C to 175°C, this diode is engineered for reliability in aerospace, defense, and industrial sectors. Packaging is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V |
| Qualification | MIL-PRF-19500/429 |
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