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JANTXV1N5554US/TR

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JANTXV1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTXV1N5554US-TR is a military-grade, general-purpose diode with a maximum reverse voltage of 1000V. This component offers an average rectified current handling of 3A and features a low reverse leakage of 1 µA at 1V. The diode operates with a forward voltage of 1.3V at 9A and a reverse recovery time of 2 µs. It utilizes standard recovery technology with a speed rating of >500ns at >200mA. The JANTXV1N5554US-TR is supplied in a SQ-MELF, E package (D-5B) suitable for surface mounting and is delivered in Tape & Reel packaging. Its qualification under MIL-PRF-19500/420 ensures reliability for demanding applications. This component is commonly employed in aerospace, defense, and high-reliability industrial systems. The operating junction temperature ranges from -65°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, E
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)3A
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 9 A
Current - Reverse Leakage @ Vr1 µA @ 1 V
QualificationMIL-PRF-19500/420

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