JANTXV1N5554US/TR
DIODE GEN PURP 1KV 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N5554US-TR is a military-grade, general-purpose diode with a maximum reverse voltage of 1000V. This component offers an average rectified current handling of 3A and features a low reverse leakage of 1 µA at 1V. The diode operates with a forward voltage of 1.3V at 9A and a reverse recovery time of 2 µs. It utilizes standard recovery technology with a speed rating of >500ns at >200mA. The JANTXV1N5554US-TR is supplied in a SQ-MELF, E package (D-5B) suitable for surface mounting and is delivered in Tape & Reel packaging. Its qualification under MIL-PRF-19500/420 ensures reliability for demanding applications. This component is commonly employed in aerospace, defense, and high-reliability industrial systems. The operating junction temperature ranges from -65°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1 V |
| Qualification | MIL-PRF-19500/420 |
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