JANTXV1N5554US
DIODE GEN PURP 1KV 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANTXV1N5554US is a military-grade, standard recovery rectifier diode designed for high-voltage applications. This component features a maximum DC reverse voltage of 1000 V and an average rectified forward current capability of 3 A. Its forward voltage drop is specified at a maximum of 1.3 V at 9 A. The diode exhibits a low reverse leakage current of 1 µA at its maximum reverse voltage. The JANTXV1N5554US is qualified to MIL-PRF-19500/420 and operates within an extended junction temperature range of -65°C to 175°C. The device is supplied in a D-5B package, also known as SQ-MELF, E, suitable for surface mounting. This component is utilized in demanding sectors such as aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Qualification | MIL-PRF-19500/420 |
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