JANTXV1N5552/TR
DIODE GEN PURP 600V 5AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTXV1N5552-TR is a general-purpose silicon rectifier diode. This device features a PIV (Peak Inverse Voltage) of 600V and a continuous forward current (Io) of 5A. The forward voltage drop (Vf) is a maximum of 1.2V at 9A. Designed for demanding applications, it exhibits a low reverse leakage current of 1 µA at 600V. The diode has a specified reverse recovery time (trr) of 2 µs and a standard recovery speed exceeding 500ns at 200mA. Manufactured to MIL-PRF-19500/420 specifications, this component is qualified for military-grade performance. It is supplied in an axial package (B) and is available on tape and reel (TR). The operating junction temperature range is -65°C to 175°C. This diode is suitable for use in aerospace, defense, and high-reliability industrial power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/420 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
