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JANTXV1N5416/TR

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JANTXV1N5416/TR

DIODE GEN PURP 100V 3A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTXV1N5416-TR is a military-grade, general-purpose diode with a 100V reverse voltage rating and a 3A average rectified current capability. This axial leaded component, supplied in a B, Axial package and presented on tape and reel (TR), features a forward voltage of 1.5V maximum at 9A. The diode exhibits a reverse leakage current of 1 µA at 100V and a reverse recovery time of 150 ns, classifying it under the fast recovery speed category. Its operating junction temperature range is -65°C to 175°C, and it meets the MIL-PRF-19500/411 qualification. This component is suitable for applications within the aerospace, defense, and industrial sectors requiring high reliability and robust performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseB, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)3A
Supplier Device PackageB, Axial
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
Current - Reverse Leakage @ Vr1 µA @ 100 V
QualificationMIL-PRF-19500/411

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