JANTXV1N3768
DIODE GEN PURP 1KV 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N3768 is a military-grade general-purpose diode designed for demanding applications. This component features a 1000V reverse voltage rating and a 35A average rectified current capability. The device operates within a junction temperature range of -65°C to 175°C and is housed in a DO-5 (DO-203AB) stud-mount package suitable for chassis mounting. The JANTXV1N3768 exhibits a forward voltage of 1.4V at 110A and a reverse leakage current of 10 µA at 1000V. Its standard recovery speed is greater than 500ns for currents above 200mA. This diode is qualified to MIL-PRF-19500/297 standards, making it suitable for use in aerospace, defense, and high-reliability industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | MIL-PRF-19500/297 |