JANTXV1N1190R
DIODE GEN PURP REV 600V 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N1190R is a military-grade, general-purpose diode designed for demanding applications. This component features a 600V reverse voltage rating and a 35A average rectified current capability. The JANTXV1N1190R is housed in a DO-5 package with a stud mount for efficient chassis mounting and thermal management. It offers a low reverse leakage of 10 µA at 600V and a forward voltage drop of 1.4V at 110A. With an operating junction temperature range of -65°C to 175°C, this diode meets the stringent requirements of MIL-PRF-19500/297 qualification. Its standard recovery speed exceeds 500ns for currents greater than 200mA. This device is suitable for use in power supplies, industrial control systems, and aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | MIL-PRF-19500/297 |
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