JANTXV1N1190
DIODE GEN PURP 600V 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTXV1N1190 is a military-grade general-purpose diode. This component features a 600V reverse voltage rating and a 35A average rectified current capability. Designed for demanding applications, it offers a standard recovery speed exceeding 500ns for currents greater than 200mA. The forward voltage drop is a maximum of 1.4V at 110A, with a low reverse leakage of 10µA at 600V. The JANTXV1N1190 is housed in a DO-203AB (DO-5) package, suitable for chassis or stud mounting, and operates within a junction temperature range of -65°C to 175°C. This component is qualified to MIL-PRF-19500/297, making it suitable for use in aerospace, defense, and other high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | MIL-PRF-19500/297 |