JANTX1N914UR/TR
DIODE GEN PURP 75V 200MA DO213AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N914UR-TR is a military-grade, general-purpose diode in a DO-213AA surface mount package. This component features a repetitive peak reverse voltage of 75V and an average rectified forward current of 200mA. With a low reverse leakage current of 500 nA at 75V and a reverse recovery time of 5ns, it is suitable for high-speed switching applications. The diode exhibits a forward voltage of 1.2V at 50mA and a junction capacitance of 4pF at 0V, 1MHz. Operating across a wide temperature range of -65°C to 175°C, this component is qualified to MIL-PRF-19500/116. It is commonly utilized in aerospace, defense, and high-reliability industrial systems. The JANTX1N914UR-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AA |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 5 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-213AA |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 50 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 75 V |
| Qualification | MIL-PRF-19500/116 |
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