JANTX1N6659
DIODE GEN PURP 200V 15A TO254Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTX1N6659 is a general-purpose diode with a maximum repetitive reverse voltage of 200V. This through-hole component, housed in a TO-254-3, TO-254AA package, offers an average rectified forward current capability of 15A. Featuring a fast recovery time of 35 ns, its forward voltage drop is a maximum of 1.2V at 20A. The reverse leakage current at its maximum rated voltage is 10 µA at 200V, with a junction capacitance of 150pF at 10V and 1MHz. This component is qualified to MIL-PRF-19500/616, indicating its suitability for demanding military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 150pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-254 |
| Operating Temperature - Junction | - |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | MIL-PRF-19500/616 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
