JANTX1N6639US/TR
DIODE GEN PURP 75V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N6639US-TR is a general-purpose diode designed for demanding applications. This component, housed in a D-5D (SQ-MELF) package, offers a 75V reverse voltage (Vr) and a 300mA average rectified forward current (Io). Its fast recovery time of 4ns, coupled with a low leakage current of 100nA at 75V, makes it suitable for high-frequency switching circuits. The forward voltage drop (Vf) is rated at a maximum of 1.2V at 300mA. This diode operates across a wide temperature range of -65°C to 175°C. Qualified to MIL-PRF-19500/609, it finds application in aerospace, defense, and industrial sectors requiring high reliability and performance. The JANTX1N6639US-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 300 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 75 V |
| Qualification | MIL-PRF-19500/609 |
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