Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

JANTX1N6638U/TR

Banner
productimage

JANTX1N6638U/TR

DIODE GEN PURP 125V 300MA D-5B

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTX1N6638U-TR is a military-grade, general-purpose diode with a maximum reverse voltage of 125V and an average rectified current of 300mA. This fast-recovery diode features a reverse recovery time of 4.5 ns and a forward voltage drop of 1.1V at 200mA. The reverse leakage current is rated at 500 nA at 125V. The component is housed in a SQ-MELF, E package, identified by the supplier device package D-5B, and is supplied in Tape & Reel (TR) packaging. This device meets MIL-PRF-19500/578 qualification standards and operates across a junction temperature range of -65°C to 175°C. Applications include aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, E
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4.5 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)300mA
Supplier Device PackageD-5B
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)125 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 200 mA
Current - Reverse Leakage @ Vr500 nA @ 125 V
QualificationMIL-PRF-19500/578

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
JANTXV1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

product image
JAN1N5623US/TR

DIODE GEN PURP 1KV 1A D-5A

product image
JANTX1N5418US

DIODE GEN PURP 400V 3A D-5B