JANTX1N5822US/TR
DIODE SCHOTTKY 40V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANTX1N5822US-TR is a Schottky diode designed for demanding applications requiring high current and fast switching. Featuring a 40 V reverse voltage rating and a 3 A average rectified current capability, this component exhibits a low forward voltage of 500 mV at 3 A. Its reverse leakage current is specified at 100 µA at 40 V. The diode is housed in a SQ-MELF, B surface-mount package, supplied on tape and reel for automated assembly. Qualified to MIL-PRF-19500/620, this military-grade component operates across a junction temperature range of -65°C to 125°C. Its Schottky technology ensures fast recovery characteristics. This device is commonly utilized in power supply circuits, voltage clamping, and reverse polarity protection within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |
| Qualification | MIL-PRF-19500/620 |