JANTX1N5814R
DIODE GEN PURP 100V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANTX1N5814R is a general-purpose diode designed for demanding applications. This device offers a 100V reverse voltage rating and a 20A average rectified forward current (Io). Featuring a fast recovery time of 35 ns, it is suitable for applications requiring efficient switching. The forward voltage drop is specified at 950mV at 20A. With a low reverse leakage current of 10 µA at 100V, this diode exhibits excellent performance characteristics. Its robust DO-203AA (DO-4) stud mount package allows for efficient thermal management via chassis mounting. The JANTX1N5814R operates across a wide junction temperature range of -65°C to 175°C and is qualified to MIL-PRF-19500/478, indicating its suitability for military and high-reliability industrial sectors. This component is commonly found in power supply rectification, voltage clamping, and general rectification circuits within aerospace, defense, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | MIL-PRF-19500/478 |
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