Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

JANTX1N5814

Banner
productimage

JANTX1N5814

DIODE GEN PURP 100V 20A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JANTX1N5814 is a general-purpose diode featuring a 100V reverse voltage rating and 20A average rectified current capability. This device, packaged in a DO-203AA (DO-4) stud mount configuration, is designed for chassis mounting. It exhibits a maximum forward voltage of 950mV at 20A and a reverse leakage current of 10µA at 100V. The diode's junction temperature operates across a wide range from -65°C to 175°C. With a capacitance of 300pF at 10V and 1MHz, and a reverse recovery time of 35ns, it falls within the fast recovery speed category. This component is qualified under MIL-PRF-19500/478, indicating its suitability for demanding applications across various industries, including aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeChassis, Stud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F300pF @ 10V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 100 V
QualificationMIL-PRF-19500/478

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

product image
JANTXV1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

product image
JAN1N5553/TR

DIODE GEN PURP 800V 3A