JANTX1N5812
DIODE GEN PURP 50V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANTX1N5812 is a military-grade, general-purpose diode with a maximum DC reverse voltage of 50V and an average rectified forward current of 20A. This device features a forward voltage drop of 950mV at 20A and a reverse leakage current of 10µA at 50V. The JANTX1N5812 is designed for high-reliability applications and is qualified under MIL-PRF-19500/478. It is housed in a DO-203AA (DO-4) stud package, enabling chassis or stud mounting for efficient thermal management. With a junction operating temperature range of -65°C to 175°C and a reverse recovery time of 35ns, this diode is suitable for demanding environments in aerospace and defense sectors. The capacitance at 10V and 1MHz is 300pF.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Qualification | MIL-PRF-19500/478 |
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