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JANTX1N5812

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JANTX1N5812

DIODE GEN PURP 50V 20A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JANTX1N5812 is a military-grade, general-purpose diode with a maximum DC reverse voltage of 50V and an average rectified forward current of 20A. This device features a forward voltage drop of 950mV at 20A and a reverse leakage current of 10µA at 50V. The JANTX1N5812 is designed for high-reliability applications and is qualified under MIL-PRF-19500/478. It is housed in a DO-203AA (DO-4) stud package, enabling chassis or stud mounting for efficient thermal management. With a junction operating temperature range of -65°C to 175°C and a reverse recovery time of 35ns, this diode is suitable for demanding environments in aerospace and defense sectors. The capacitance at 10V and 1MHz is 300pF.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeChassis, Stud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F300pF @ 10V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 50 V
QualificationMIL-PRF-19500/478

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