JANTX1N5811US/TR
DIODE GEN PURP 150V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTX1N5811US-TR is a general-purpose diode with a 150V reverse voltage rating and a 3A average rectified current capability. This device features a fast recovery time of 30 ns and a forward voltage drop of 875 mV at 4A. The leakage current is a low 5 µA at 150V. Capacitance is specified at 60pF @ 10V, 1MHz. The SQ-MELF, B package is designed for surface mounting and is supplied on tape and reel (TR) for automated assembly. This component meets MIL-PRF-19500/477 qualification, indicating suitability for demanding applications in aerospace and defense. Its operating junction temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
