JANTX1N5806US/TR
DIODE GEN PURP 150V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTX1N5806US-TR is a military-grade, fast-recovery general-purpose diode. This component, qualified to MIL-PRF-19500/477, features a maximum DC reverse voltage of 150 V and an average rectified current of 1 A. The forward voltage drop is rated at 975 mV at 2.5 A, with a reverse leakage current of 1 µA at 150 V. Its capacitance at 10 V and 1 MHz is 25 pF, and the reverse recovery time (trr) is 25 ns. Designed for demanding applications, this diode is packaged in a SQ-MELF, A (D-5A) surface-mount case and supplied on tape and reel. It operates across a junction temperature range of -65°C to 175°C, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
1N3600UR
DIODE GEN PURP 75V 300MA DO213AA
UFS110JE3/TR13
DIODE GEN PURP 100V 1A DO214BA
1N4148UB2
SWITCHING DIODE
