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JANTX1N5622US/TR

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JANTX1N5622US/TR

DIODE GEN PURP 1KV 1A D-5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTX1N5622US-TR is a general-purpose diode designed for high-reliability applications. This component features a 1000 V reverse voltage rating and a 1A average rectified current capability. The diode exhibits a maximum forward voltage of 1.3 V at 3A and a reverse leakage current of 500 nA at 1V. With a reverse recovery time of 2 µs, it falls under the standard recovery category. The JANTX1N5622US-TR is housed in a SQ-MELF, A package (D-5A) for surface mounting and operates within a junction temperature range of -65°C to 200°C. This component is manufactured to meet MIL-PRF-19500/427 qualifications, making it suitable for demanding industries such as aerospace and defense. The JANTX1N5622US-TR is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr500 nA @ 1 V
QualificationMIL-PRF-19500/427

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