JANTX1N5622US/TR
DIODE GEN PURP 1KV 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5622US-TR is a general-purpose diode designed for high-reliability applications. This component features a 1000 V reverse voltage rating and a 1A average rectified current capability. The diode exhibits a maximum forward voltage of 1.3 V at 3A and a reverse leakage current of 500 nA at 1V. With a reverse recovery time of 2 µs, it falls under the standard recovery category. The JANTX1N5622US-TR is housed in a SQ-MELF, A package (D-5A) for surface mounting and operates within a junction temperature range of -65°C to 200°C. This component is manufactured to meet MIL-PRF-19500/427 qualifications, making it suitable for demanding industries such as aerospace and defense. The JANTX1N5622US-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 1 V |
| Qualification | MIL-PRF-19500/427 |
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