JANTX1N5621US/TR
DIODE GEN PURP 800V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5621US-TR is an 800V, 1A general-purpose diode. This military-grade component, qualified to MIL-PRF-19500/429, features a fast recovery time of 150 ns. The forward voltage (Vf) is a maximum of 1.6V at 3A, with a reverse leakage current of 500 nA at 800V. It is supplied in a D-5A (SQ-MELF, A) surface mount package, presented on tape and reel (TR). With a junction operating temperature range of -65°C to 175°C, this diode is suitable for applications in aerospace, defense, and high-reliability industrial systems. The capacitance at 12V and 1MHz is 20pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 800 V |
| Qualification | MIL-PRF-19500/429 |
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