JANTX1N5618US/TR
DIODE GEN PURP 600V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5618US-TR is a military-grade general-purpose diode. This standard recovery diode features a 600V reverse voltage rating and a 1A average rectified forward current. The JANTX1N5618US-TR exhibits a maximum forward voltage of 1.3V at 3A and a reverse leakage current of 500 nA at 600V. With a reverse recovery time of 2 µs, it operates across a junction temperature range of -65°C to 200°C. The component is housed in a SQ-MELF, A package, also identified as D-5A, and supplied on tape and reel (TR). This device is qualified to MIL-PRF-19500/427, making it suitable for applications in aerospace and defense.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V |
| Qualification | MIL-PRF-19500/427 |