JANTX1N5618/TR
DIODE GEN PURP 600V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5618-TR is a military-grade, general-purpose diode designed for demanding applications. This through-hole component, packaged in an A, Axial configuration and supplied on tape and reel (TR), offers a maximum DC reverse voltage of 600 V and an average rectified current of 1A. Key specifications include a forward voltage of 1.3 V at 3A and a reverse leakage current of 500 nA at 600 V. The diode features a reverse recovery time of 2 µs, characteristic of standard recovery diodes. Its robust operating temperature range of -65°C to 200°C and MIL-PRF-19500/427 qualification make it suitable for aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V |
| Qualification | MIL-PRF-19500/427 |
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