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JANTX1N5616US/TR

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JANTX1N5616US/TR

DIODE GEN PURP 400V 1A D-5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JANTX1N5616US-TR is a military-grade general-purpose diode designed for demanding applications. This component features a 400V reverse voltage rating and a 1A average rectified forward current capability. It is housed in a D-5A SQ-MELF package suitable for surface mount assembly, delivered on tape and reel. With a maximum forward voltage of 1.3V at 3A and a reverse leakage of only 500 nA at 400V, this diode offers efficient operation. Its reverse recovery time is rated at 2 µs, classifying it as a standard recovery diode. The JANTX1N5616US-TR meets MIL-PRF-19500/427 qualification standards and operates across a temperature range of -65°C to 200°C, making it suitable for use in aerospace and defense systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr500 nA @ 400 V
QualificationMIL-PRF-19500/427

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