JANTX1N5614US/TR
DIODE GEN PURP 200V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5614US-TR is a military-grade general-purpose diode featuring a 200V reverse voltage and a 1A average rectified current. This surface-mount component, packaged in a D-5A (SQ-MELF, A) case, offers a maximum forward voltage of 1.3V at 3A and a low reverse leakage of 500 nA at 200V. With a reverse recovery time of 2µs, it is designed for standard recovery applications. Operating across a junction temperature range of -65°C to 200°C, this component is qualified under MIL-PRF-19500/437, making it suitable for demanding applications in aerospace and defense. The JANTX1N5614US-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
| Qualification | MIL-PRF-19500/437 |